BCR1002N3 SCR DATASHEET

BCR1002N3 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 50 V
   Maximum RMS on-state current (I_T(RMS)): 200 A
   Triggering gate voltage (V_GT): 0.8 V

Package: SOT‑23

 

BCR1002N3 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BCR1002N3 Datasheet

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Description

Spec. No. : C700N3 Issued Date : 2008.02.25 CYStech Electronics Corp. Revised Date :2014.01.24 Page No. : 1/7 PNPN Epitaxial Planar SCR BCR1002N3 Descriptions The BCR1002N3 is designed for high volume consumer applications such as temperature, light, and speed control; process and remote control, and warning systems where reliability of operation is important. Features • Practical level triggering and holding characteristics • On state current rating of 0.2A RMS