BCR1AM-8P Triac DATASHEET

BCR1AM-8P ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 50 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 0.01 mA

Package: TO‑92

BCR1AM-8P Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BCR1AM-8P Datasheet

Page #1

Page #2

Description

Preliminary Datasheet BCR1AM-8P R07DS0178EJ0100 Triac Rev.1.00 Low Power Use Sep 29, 2010 Features  IT (RMS) : 1 A  Non-Insulated Type  VDRM : 400 V  Planar Passivation Type  IFGTI , IRGTI, IRGT III : 5 mA (3 mA)Note5  IFGT III : 10 mA Outline RENESAS Package code: PRSS0003EA-A (Package name: TO-92*) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 3 2 Applications Contactless AC switch, fan motor, rice-cooker, electric pot, air cle

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BCR1AM-8P Datasheet