BCR25FR-12LB Triac DATASHEET

BCR25FR-12LB ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 250 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 2.8 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 50 mA

Package: TO‑220F

BCR25FR-12LB Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BCR25FR-12LB Datasheet

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Description

isc Triacs BCR25FR-12LB Features ·With TO-220F package ·IT (RMS)： 25 A ·VDRM：600 V ·Tj：150 °C ·Minimum Lot-to-Lot variations for robust device performance and reliable operation Applications ·Provide high ability to withstand the shock loading of large current， They are especially recommended for use on inductive load and high environment temperature condition. ABSOLUTE MAXIMUM RATINGS SYMBOL PARAMETER MIN UNIT Repetitive peak off-state voltage V 600 V DRM (Tj=

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BCR25FR-12LB Datasheet