BCR30GM Triac DATASHEET

BCR30GM ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 30 A
   Non repetitive surge peak on-state current (I_TSM): 300 A
   Critical rate of rise of off-state voltage (dV/dt): 3 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 50 mA

 

BCR30GM Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BCR30GM Datasheet

Page #1

Page #2

Description

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR30GM MEDIUM POWER USE INSULATED TYPE, GLASS PASSIVATION TYPE Dimensions BCR30GM OUTLINE DRAWING in mm 2 39.2 MAX 20.2 MAX 2-φ4.2 5.0 MIN 3 2 20.1 MAX 21.6 MAX 1 30.0±0.2 3 1 1 T1 TERMINAL 7.0 7.0 2 T2 TERMINAL 3 GATE TERMINAL 8.25 φ2.0(T1,T2) φ1.55(G) 6.35 GATE T1 TERMINAL TERMINAL 1.5 INDICATION INDICATION • IT (RMS) ...................................................................... 30A TRADEMARK • V