BCR3PM-12LA Triac DATASHEET

BCR3PM-12LA ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 3 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 4.5 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 0.02 mA

Package: TO‑220F

BCR3PM-12LA Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BCR3PM-12LA Datasheet

Page #1

Page #2

Description

Preliminary Datasheet BCR3PM-12LA R07DS0097EJ0300 (Previous: REJ03G0301-0200) Triac Rev.3.00 Low Power Use Sep 13, 2010 Features  IT (RMS) : 3 A  Insulated Type  VDRM : 600 V  Planar Passivation Type  IFGTI, IRGTI, IRGT III : 20 mA (10 mA)Note5  UL Recognized : Yellow Card No. E223904  Viso : 2000 V Outline RENESAS Package code: PRSS0003AA-A (Package name: TO-220F) 2 1. T1 Terminal 2. T2 Terminal 3. Gate Terminal 3 1 1 2 3 Applications

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BCR3PM-12LA Datasheet