BCR5KM Triac DATASHEET

BCR5KM ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 3 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 5 A
   Non repetitive surge peak on-state current (I_TSM): 50 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3.8 K/W
   Peak on-state voltage drop (V_TM): 1.5 V

Package: TO220FN

 

BCR5KM Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BCR5KM Datasheet

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Description

MITSUBISHI SEMICONDUCTOR 〈TRIAC〉 BCR5KM MEDIUM POWER USE INSULATED TYPE, PLANAR PASSIVATION TYPE BCR5KM OUTLINE DRAWING Dimensions in mm 10 ± 0.3 2.8 ± 0.2 φ 3.2 ± 0.2 1.1 ± 0.2 1.1 ± 0.2 E 0.75 ± 0.15 0.75 ± 0.15 2.54 ± 0.25 2.54 ± 0.25 Measurement point of case temperature T1 TERMINAL .................................................................. IT (RMS) 5A T2 TERMINAL ...................................................... GATE TERMINAL VDRM 400