BT131-600E Triac DATASHEET

BT131-600E ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 16 A
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 10 mA

BT131-600E Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BT131-600E Datasheet

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Description

BT131-600E 4Q Triac 17 September 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT54 plastic package. This sensitive gate "series E" triac is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits • Direct interfacing to logic level ICs • Direct interfacing with low power gate drivers and microcontrollers • High blocking voltage capability • Planar passivated for voltage

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BT131-600E Datasheet