All Transistors. SCR. BT134-500 Datasheet

 

BT134-500 Triac DATASHEET

BT134-500 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 500 V
   Maximum average on-state current (IT(AVR)): 4 A
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 35 mA
   Holding current (IH): 5 mA

Package: TO‑220

 

BT134-500 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BT134-500 Datasheet

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BT134-500
 datasheet

Page #2

BT134-500
 datasheet #2

Description

BT134-500/600/800 双向可控硅/TRIAC 用途:主要用于马达控制,工业和家庭照明灯,加热控制和静电开关。 Purpose: Typical applications include motor control,industrial and domestic lighting, heating and static switching. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 数值 单位 Symbol Rating Unit V 500 600 800 V DRM I 4.0 A T(RMS) I 25 A TSM(t=20ms) I 27 A TSM(t=16.7ms) I2t 3.1 A2S (t=10ms) dI /dt 50 A/μs T I 2.

 
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