BT134-800 Triac DATASHEET
BT134-800 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 4 A
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 100 K/W
Junction to case thermal resistance (RTH(j-c)): 3 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.7 V
Triggering gate current (IGT): 35 mA
Holding current (IH): 5 mA
BT134-800 Datasheet
Page #1
Page #2
Description
BT134-800 4Q Triac 21 November 2013 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications. 2. Features and benefits • Compact package • High blocking voltage capability • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants 3. Applications
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |