All Transistors. SCR. BT134-800 Datasheet

 

BT134-800 Triac DATASHEET

BT134-800 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum average on-state current (IT(AVR)): 4 A
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 100 K/W
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 35 mA
   Holding current (IH): 5 mA

Package: TO‑220 SOT‑82

 

BT134-800 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BT134-800 Datasheet

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BT134-800
 datasheet

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BT134-800
 datasheet #2

Description

BT134-800 4Q Triac 21 November 2013 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT82 plastic package intended for use in general purpose bidirectional switching and phase control applications. 2. Features and benefits • Compact package • High blocking voltage capability • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Triggering in all four quadrants 3. Applications

 
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