BT136-600D Triac DATASHEET
BT136-600D ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 25 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 3 K/W
Triggering gate voltage (VGT): 0.7 V
Peak on-state voltage drop (VTM): 1.4 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 1.2 mA
Package: TO‑220AB
BT136-600D Datasheet
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Description
BT136-600D 4Q Triac 30 September 2013 Product data sheet 1. General description Planar passivated very sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications, where high sensitivity is required in all four quadrants. This very sensitive gate "series D" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2.
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