BT136-600E Triac DATASHEET

BT136-600E ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 10 mA

BT136-600E Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BT136-600E Datasheet

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Description

BT136-600E 4Q Triac 30 September 2013 Product data sheet 1. General description Planar passivated sensitive gate four quadrant triac in a SOT78 plastic package intended for use in general purpose bidirectional switching and phase control applications. This sensitive gate "series E" triac is intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Direct triggering from low power drivers a

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BT136-600E Datasheet