All Transistors. SCR. BT136S-600 Datasheet

 

BT136S-600 Triac DATASHEET

BT136S-600 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 6 A
   Non repetitive surge peak on-state current (ITSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 1.45 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 10 mA
   Holding current (IH): 20 mA

Package: TO‑252

 

BT136S-600 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BT136S-600 Datasheet

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BT136S-600
 datasheet

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BT136S-600
 datasheet #2

Description

BT136S-600 4Q Triac 30 September 2013 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. 2. Features and benefits • High blocking voltage capability • Less sensitive gate for improved noise immunity • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in

 
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