BT137S-500F Triac Spec
BT137S-500F ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 500 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 65 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 0.7 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 25 mA
Holding current (IH): 20 mA
Package: TO‑252
BT137S-500F Spec
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Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate ThyristorS BT137S TRIAC TO-252-2L GENERAL DESCRIPTION : Glass passivated triacs in a plastic envelope , intended for use in 1. ANODE 1 2. ANODE applications requiring high bidirectional transient and blocking voltage 3. GATE 2 capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting , heating and static switching. MA


