BT137S-500G Triac DATASHEET
BT137S-500G ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 500 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 65 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 0.7 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 40 mA
Package: TO‑252
BT137S-500G Datasheet
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Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-252-2L Plastic-Encapsulate ThyristorS BT137S TRIAC TO-252-2L GENERAL DESCRIPTION : Glass passivated triacs in a plastic envelope , intended for use in 1. ANODE 1 2. ANODE applications requiring high bidirectional transient and blocking voltage 3. GATE 2 capability and high thermal cycling performance. Typical applications include motor control, industrial and domestic lighting , heating and static switching. MA
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |