BT137S-800G Triac DATASHEET
BT137S-800G ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 8 A
Non repetitive surge peak on-state current (ITSM): 65 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 200 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 75 K/W
Junction to case thermal resistance (RTH(j-c)): 2 K/W
Triggering gate voltage (VGT): 0.7 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 40 mA
Package: TO‑252
BT137S-800G Datasheet
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Description
BT137S-800G 4Q Triac 12 June 2014 Product data sheet 1. General description Planar passivated four quadrant triac in a SOT428 (DPAK) surface-mountable plastic package intended for use in general purpose bidirectional switching and phase control applications. 2. Features and benefits • High blocking voltage capability • Least sensitive gate for highest noise immunity • Planar passivated for voltage ruggedness and reliability • Surface-mountable package • Triggering in all
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |