All Transistors. SCR. BT150S-600R Datasheet

 

BT150S-600R SCR DATASHEET

BT150S-600R ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum average on-state current (IT(AVR)): 2.5 A
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 35 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 3 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.8 V
   Triggering gate current (IGT): 0.2 mA

Package: TO‑252

 

BT150S-600R Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BT150S-600R Datasheet

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BT150S-600R
 datasheet

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BT150S-600R
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Description

BT150S-600R SCR 17 March 2014 Product data sheet 1. General description Planar passivated SCR with sensitive gate in a SOT428 (DPAK) surface mountable plastic package. These devices are intended to be interfaced directly to microcontrollers, logic integrated circuits and other low power gate trigger circuits. 2. Features and benefits • Sensitive gate • Planar passivated for voltage ruggedness and reliability • Direct triggering from low power drivers and logic ICs • Surface

 
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