BT151-800R SCR DATASHEET
BT151-800R ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum peak gate power (PGM): 0.5 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 8 A
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 100 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 1.3 K/W
Triggering gate voltage (VGT): 0.6 V
Peak on-state voltage drop (VTM): 1.75 V
Triggering gate current (IGT): 2 mA
Holding current (IH): 7 mA
Package: TO‑220
BT151-800R Datasheet
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Description
BT151-800R SCR, 12 A, 15mA, 800 V, SOT78 Rev. 05 — 2 March 2009 Product data sheet 1. Product profile 1.1 General description Planar passivated SCR (Silicon Controlled Rectifier) in a SOT78 plastic package. 1.2 Features and benefits High reliability High thermal cycling performance High surge current capability 1.3 Applications Ignition circuits Protection Circuits Motor control Static switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditio
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |