BT151S-500R SCR DATASHEET

BT151S-500R ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 500 V
   Maximum average on-state current (I_T(AVR)): 7.5 A
   Non repetitive surge peak on-state current (I_TSM): 80 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.75 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 6 mA
   Holding current (I_H): 30 mA

Package: TO‑252

 

BT151S-500R Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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BT151S-500R Datasheet

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Description

BT151S series L and R Thyristors Rev. 05 — 9 October 2006 Product data sheet 1. Product profile 1.1 General description Passivated thyristors in a SOT428 plastic package. 1.2 Features High thermal cycling performance Surface-mounted package High bidirectional blocking voltage capability 1.3 Applications Motor control Static switching Ignition circuits Protection circuits 1.4 Quick reference data VDRM ≤ 500 V (BT151S-500L/R) ITSM ≤ 120 A (t = 10 ms) VRRM ≤ 500 V (B