All Transistors. SCR. BT152X-600R Datasheet

 

BT152X-600R SCR DATASHEET

BT152X-600R ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 650 V
   Maximum average on-state current (IT(AVR)): 13 A
   Maximum RMS on-state current (IT(RMS)): 20 A
   Non repetitive surge peak on-state current (ITSM): 200 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 4 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.75 V
   Triggering gate current (IGT): 32 mA

Package: TO‑220F

 

BT152X-600R Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BT152X-600R Datasheet

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BT152X-600R
 datasheet

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BT152X-600R
 datasheet #2

Description

BT152X-600R SCR 18 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier (SCR) in a SOT186A (TO-220F) "full pack" plastic package intended for use in applications requiring very high inrush current capability and high thermal cycling performance. 2. Features and benefits • High blocking voltage capability • High thermal cycling performance • Isolated mounting base package • Planar passivated for voltage ruggedness and reliabilit

 
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