BT169D SCR Spec

BT169D ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 2 W
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum average on-state current (I_T(AVR)): 0.5 A
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.35 V
   Triggering gate current (I_GT): 0.2 mA
   Holding current (I_H): 5 mA

Package: TO‑92

 

BT169D Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BT169D Spec

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Description

BT169D SCR 19 March 2014 Product data sheet 1. General description Planar passivated Silicon Controlled Rectifier with sensitive gate in a SOT54 (TO-92) plastic package. This SCR is designed to be interfaced directly to microcontrollers, logic ICs and other low power gate trigger circuits. 2. Features and benefits • Planar passivated for voltage ruggedness and reliability • Sensitive gate • Direct triggering from low power gate circuits and logic ICs 3. Applications • Igni