BTA04 Triac DATASHEET

BTA04 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 4 A
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 30 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3.3 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 15 mA

Package: TO‑220F

 

BTA04 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA04 Datasheet

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Description

BTA04 双向可控硅/TRIAC 用途：用于需要高灵敏度触发的场合。 Purpose: General purpose applications where gate high sensitivity required. 特点：低控制极触发电流。 Features: Low gate triggering current. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 测试条件 数值 单位 Symbol Test condition Rating Unit V /V Tj=110℃ 600 V DRM RRM I T =90℃ 4.0 A T(RMS) C tp=8.3ms 42 A I TSM tp=10ms 40 A I2t tp=10ms 8.0 A2s Rep