BTA06 Triac DATASHEET

BTA06 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 6 A
   Maximum RMS on-state current (I_T(RMS)): 6 A
   Non repetitive surge peak on-state current (I_TSM): 60 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 40 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.7 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 15 mA

Package: TO‑220F

 

BTA06 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA06 Datasheet

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Description

BTA06 双向可控硅/TRIAC 用途：用于交流转换。 Purpose: For AC switching operations. 特点：高转换性能。 Features: High commutation performances. 极限参数/Absolute maximum ratings(Ta=25℃) 参数符号 测试条件 数值 单位 Symbol Test condition Rating Unit V /V Tj=110℃ 600 V DRM RRM I T =110℃ 6.0 A T(RMS) C F=50Hz t=20ms 60 A I TSM F=60Hz t=16.7ms 63 A I2t tp=10ms 21 A2s dI/dt F=120Hz Tj=125℃ 50 A/μs I Tp=20μs Tj=125℃ 4