BTA204S-800E Triac DATASHEET

BTA204S-800E ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 25 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 30 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 75 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3 K/W
   Triggering gate voltage (V_GT): 0.7 V
   Peak on-state voltage drop (V_TM): 1.7 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 12 mA

Package: TO‑252

BTA204S-800E Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BTA204S-800E Datasheet

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Description

BTA204S-800E 3Q Hi-Com Triac 12 August 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT428 (DPAK) surface-mountable plastic package. This "series E" triac balances the requirements of commutation performance and gate sensitivity and is intended for interfacing with low power drivers and logic ICs including microcontrollers. 2. Features and benefits • 3Q technology for improved noise immunity • Direct triggering from

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. BTA204S-800E Datasheet