BTA212B-800B Triac Spec

BTA212B-800B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 12 A
   Non repetitive surge peak on-state current (I_TSM): 95 A
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.6 V
   Triggering gate current (I_GT): 50 mA

Package: TO‑263

 

BTA212B-800B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA212B-800B Spec

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Description

INCHANGE Semiconductor isc Thyristors BTA212B-800B DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V R