BTA26-800B Triac DATASHEET

BTA26-800B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 25 A
   Non repetitive surge peak on-state current (I_TSM): 250 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 1.1 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA

Package: TO‑3PN

 

BTA26-800B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA26-800B Datasheet

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Description

INCHANGE Semiconductor isc Thyristors BTA26-800B DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High voltage capability;high current capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Applications subject to high temperature ·Heating controls; high power motor control ·High power switching ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 800 V DRM