All Transistors. SCR. BTA316X-600B Datasheet

 

BTA316X-600B Triac DATASHEET

BTA316X-600B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 150 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to ambient thermal resistance (RTH(j-a)): 55 K/W
   Junction to case thermal resistance (RTH(j-c)): 4 K/W
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 50 mA
   Holding current (IH): 60 mA

Package: TO‑220F

 

BTA316X-600B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BTA316X-600B Datasheet

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BTA316X-600B
 datasheet

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BTA316X-600B
 datasheet #2

Description

BTA316X-600B 3Q Hi-Com Triac 24 September 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full rated RMS current at the maximum rated junction temperature without the aid of a snubber. 2. Features and benefits • 3Q technology for improved noise immunity •

 
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