BTA316X-800E Triac DATASHEET

BTA316X-800E ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 0.5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 800 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 150 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 60 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 55 K/W
   Junction to case thermal resistance (R_TH(j-c)): 4 K/W
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 15 mA

Package: TO‑220F

 

BTA316X-800E Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA316X-800E Datasheet

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Description

BTA316X-800E 3Q Hi-Com Triac 4 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT186A "full pack" plastic package. The "series E" triac balances the requirements of commutation performance and gate sensitivity. The "sensitive gate" "series E" is intended for interfacing with low power drivers including microcontrollers. 2. Features and benefits • 3Q technology for improved noise immunity • Direct interfacing with