BTA41-1200 Triac DATASHEET

BTA41-1200 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum RMS on-state current (I_T(RMS)): 41 A
   Non repetitive surge peak on-state current (I_TSM): 410 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.9 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 80 mA

Package: TOP3

 

BTA41-1200 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA41-1200 Datasheet

Page #1

Page #2

Description

INCHANGE Semiconductor isc Triacs BTA41-1200 FEATURES ·With TOP3 insulated package ·Suitables for general purpose where high surge current capability is required. Application such as phase control and tatic switching on inductive or resistive load. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 1200 V DRM V Repetitive peak reverse voltage 1200 V