All Transistors. SCR. BTA412Y-800ET Datasheet

 

BTA412Y-800ET Triac DATASHEET

BTA412Y-800ET ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 140 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
   Triggering gate voltage (VGT): 1 V
   Peak on-state voltage drop (VTM): 1.6 V
   Triggering gate current (IGT): 10 mA

Package: TO‑220

 

BTA412Y-800ET Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BTA412Y-800ET Datasheet

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BTA412Y-800ET
 datasheet

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BTA412Y-800ET
 datasheet #2

Description

INCHANGE Semiconductor isc Thyristors BTA412Y-800ET DESCRIPTION ·With TO-220 packaging ·High operating junction temperature ·Very high commutation performancemaximized at each gate sensitivity ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·High temperature, high power motor control ·Solid state relays;heating and cooking appliances ·Switching applications ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V

 
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