All Transistors. SCR. BTA416Y-800B Datasheet

 

BTA416Y-800B Triac DATASHEET

BTA416Y-800B ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.5 W
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 16 A
   Non repetitive surge peak on-state current (ITSM): 160 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 600 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Junction to case thermal resistance (RTH(j-c)): 1.9 K/W
   Triggering gate voltage (VGT): 0.7 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 50 mA
   Holding current (IH): 60 mA

Package: TO‑220AB

 

BTA416Y-800B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BTA416Y-800B Datasheet

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BTA416Y-800B
 datasheet

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BTA416Y-800B
 datasheet #2

Description

BTA416Y-800B 3Q Hi-Com Triac 10 June 2014 Product data sheet 1. General description Planar passivated high commutation three quadrant triac in a SOT78D (TO-220AB) internally insulated plastic package intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. This "series B" triac will commutate the full RMS current at the maximum rated junction temperature without the aid of a snubber. This device has high Tj operating capability and an internally isola

 
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