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BTA445Z-800BT Triac DATASHEET

BTA445Z-800BT ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 800 V
   Maximum RMS on-state current (IT(RMS)): 45 A
   Non repetitive surge peak on-state current (ITSM): 450 A
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 0.9 K/W
   Triggering gate voltage (VGT): 1.3 V
   Peak on-state voltage drop (VTM): 1.7 V
   Triggering gate current (IGT): 50 mA

Package: TO‑3PN

 

BTA445Z-800BT Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BTA445Z-800BT Datasheet

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BTA445Z-800BT
 datasheet

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BTA445Z-800BT
 datasheet #2

Description

INCHANGE Semiconductor isc Thyristors BTA445Z-800BT DESCRIPTION ·With TO-3PN packaging ·Operating in 4 quadrants ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Phase control ·Static switching on inductive or resistive load ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 800 V DRM V Repetitive peak reverse voltage 800

 
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