BTA60-BTB60 Triac DATASHEET

BTA60-BTB60 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 60 A
   Non repetitive surge peak on-state current (I_TSM): 600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 80 mA

Package: TO247

 

BTA60-BTB60 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTA60-BTB60 Datasheet

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Description

BTA60-BTB60 60A SERIES T2 T1 BI-DIRECTIONAL TRIODE THYRISTOR G SCHEMATIC SYMBOL DESCRIPTION General purpose switching and phase control applications .These devices are intended to be TO-247 interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control , lighting control and static switching relay. FEATURES • Repetitive Peak off-State Voltage: 600V/800V/1200V/1600V • R.M.S On-