BTA60-BTB60 Triac DATASHEET

BTA60-BTB60 ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 60 A
   Non repetitive surge peak on-state current (I_TSM): 600 A
   Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.55 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 80 mA

Package: TO247

BTA60-BTB60 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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BTA60-BTB60 Datasheet

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Description

BTA60-BTB60 60A SERIES T2 T1 BI-DIRECTIONAL TRIODE THYRISTOR G SCHEMATIC SYMBOL DESCRIPTION General purpose switching and phase control applications .These devices are intended to be TO-247 interfaced directly to microcontrollers , logic integrated circuits and other low power gate trigger circuits such as fan speed and temperature modulation control , lighting control and static switching relay. FEATURES • Repetitive Peak off-State Voltage: 600V/800V/1200V/1600V • R.M.S On-

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

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