All Transistors. SCR. BTB04 Datasheet

 

BTB04 Triac DATASHEET

BTB04 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 40 A
   Maximum operating junction and storage temperature range (Tstg, Tj): ..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Junction to case thermal resistance (RTH(j-c)): 3.2 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.65 V
   Triggering gate current (IGT): 5 mA
   Holding current (IH): 15 mA

Package: TO‑220

 

BTB04 Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BTB04 Datasheet

Page #1

BTB04
 datasheet

Page #2

BTB04
 datasheet #2

Description

isc Triacs BTB04 T/D/S/A FEATURES ·With TO-220AB non insulated package ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT I RMS on-state current (full sine wave)T =95℃ 4 A T(RMS) j I 40 A TSM Non-repetitive peak on-state current t =10ms p

 
Back to Top