BTB04-252 Triac Spec

BTB04-252 ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 40 A
   Maximum operating junction and storage temperature range (T_stg, T_j): ..110 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 60 K/W
   Junction to case thermal resistance (R_TH(j-c)): 3.2 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.65 V
   Triggering gate current (I_GT): 5 mA
   Holding current (I_H): 15 mA

Package: TO‑252

 

BTB04-252 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

BTB04-252 Spec

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Description

INCHANGE Semiconductor isc Triacs BTB04 T/D/S/A Features ·Suitables for general purpose applications where gate high sensitivity is required. Application on 4Q such as phase control and static switching. ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MIN UNIT I RMS on-state current (full sine wave)T =95℃ 4 A T(RMS) j I 40 A TSM Non-repetitive peak on-state current t =10ms p T Operating j