BTB04-400 Triac DATASHEET

BTB04-400 ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum repetitive peak and off-state voltage (V_DRM): 400 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 42 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..150 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 62.5 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.65 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 25 mA

Package: TO‑220

BTB04-400 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

BTB04-400 Datasheet

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Description

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate Thyristors TO-220-3L BTB04 TRIAC 1. ANODE MAIN FEATURES 2. ANODE Symbol value unit 3. GATE 4 A IT(RMS) BTB04-400 BTB04-600 VDRM/VRRM V 400 600 5 to 25 mA IGT DESCRIPTION The BTB04 triac family are high performance glass passivated PNPN devices.These parts are suitables for general purpose applications where gate high sensitivity is required.Application on 4Q such as phase cont

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All Transistors. SCR. BTB04-400 Datasheet