All Transistors. SCR. BTB04-600S Datasheet

 

BTB04-600S Triac DATASHEET

BTB04-600S ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 40 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 4 A
   Non repetitive surge peak on-state current (ITSM): 40 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Junction to case thermal resistance (RTH(j-c)): 2.4 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.65 V
   Triggering gate current (IGT): 10 mA
   Holding current (IH): 25 mA

Package: TO‑220

 

BTB04-600S Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

BTB04-600S Datasheet

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BTB04-600S
 datasheet

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BTB04-600S
 datasheet #2

Description

BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS FEATURES .VERY LOW IGT = 10mA max .LOW IH = 15mA max .BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB04 T/D/S/A triac family are high per- G formance glass passivated PNPN devices. These parts are suitables for general purpose ap- TO220AB plications where gate high sensitivity is required. (Plastic) Application on 4Q such as phase control and static switching. ABSOLUTE RA

 
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