BTB04-600T Triac DATASHEET
BTB04-600T ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 40 W
Maximum repetitive peak and off-state voltage (VDRM): 600 V
Maximum RMS on-state current (IT(RMS)): 4 A
Non repetitive surge peak on-state current (ITSM): 40 A
Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
Critical rate of rise of off-state voltage (dV/dt): 10 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 2.4 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.65 V
Triggering gate current (IGT): 5 mA
Holding current (IH): 15 mA
Package: TO‑220
BTB04-600T Datasheet
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Description
BTA04 T/D/S/A BTB04 T/D/S/A SENSITIVE GATE TRIACS FEATURES .VERY LOW IGT = 10mA max .LOW IH = 15mA max .BTA Family : INSULATING VOLTAGE = 2500V(RMS) (UL RECOGNIZED : E81734) DESCRIPTION A1 A2 The BTA/BTB04 T/D/S/A triac family are high per- G formance glass passivated PNPN devices. These parts are suitables for general purpose ap- TO220AB plications where gate high sensitivity is required. (Plastic) Application on 4Q such as phase control and static switching. ABSOLUTE RA
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