BTB12-800SW Triac DATASHEET
BTB12-800SW ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 1 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum average on-state current (IT(AVR)): 12 A
Maximum RMS on-state current (IT(RMS)): 12 A
Non repetitive surge peak on-state current (ITSM): 120 A
Critical repetitive rate of rise of on-state current (dI/dt): 50 A/µs
Critical rate of rise of off-state voltage (dV/dt): 20 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -55..150 °C
Junction to ambient thermal resistance (RTH(j-a)): 62.5 K/W
Triggering gate voltage (VGT): 1.3 V
Peak on-state voltage drop (VTM): 1.55 V
Triggering gate current (IGT): 10 mA
Holding current (IH): 15 mA
Package: TO‑220
BTB12-800SW Datasheet
Page #1
Page #2
Description
JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220-3L Plastic-Encapsulate ThyristorS BTB12 3Q TRIAC TO-220-3L FEATURE High Blocking Voltage Capability 1.MAIN TERMINAL1 High Surge Current Capability 2.MAIN TERMINAL2 High Commutation Performances 3.GATE Uniform Gate Trigger Currents in Three Quadrants Medium Current Triac APPLICATION General purpose AC switching Motor control, static relays, light dimmers and appliance motors speed controll
LIST
Last Update
SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |