BTW69-1000 SCR Spec

BTW69-1000 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1000 V
   Maximum RMS on-state current (I_T(RMS)): 50 A
   Non repetitive surge peak on-state current (I_TSM): 580 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.9 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.9 V
   Triggering gate current (I_GT): 80 mA

Package: TO‑3P

 

BTW69-1000 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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BTW69-1000 Spec

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Description

isc Thyristors BTW69-1000 APPLICATIONS ·Available in high power packages, BTW69 Series is suitable in applications where power handling and power dissipation are critical, uch as solid state relays, welding equipment, high power motor ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MIN UNIT V Repetitive peak off-state voltage 1000 V DRM V Repetitive peak reverse voltage 1000 V RRM I Avera