BTW69-1200N SCR Spec

BTW69-1200N ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 50 A
   Non repetitive surge peak on-state current (I_TSM): 580 A
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.9 K/W
   Triggering gate voltage (V_GT): 1.3 V
   Peak on-state voltage drop (V_TM): 1.9 V
   Triggering gate current (I_GT): 80 mA

Package: TO‑3P

 

BTW69-1200N Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

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BTW69-1200N Spec

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Description

INCHANGE Semiconductor isc Thyristors BTW69-1200N DESCRIPTION ·With TO-3P packaging ·High commutation capability ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·Switching applications ·Battery charging system ·Uninterruptible power supply ·Variable speed motor drive ·Industrial welding systems ·By pass AC switch ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER MAX UNIT V Repetitive peak off-state voltage 600 V D