All Transistors. SCR. C103B Datasheet

 

C103B SCR DATASHEET

C103B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (VDRM): 30 V
   Maximum RMS on-state current (IT(RMS)): 0.8 A
   Non repetitive surge peak on-state current (ITSM): 8 A
   Triggering gate voltage (VGT): 0.8 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 200 mA
   Holding current (IH): 5 mA

Package: TO‑92

 

C103B Replacements

Type
< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

C103B Datasheet

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C103B
 datasheet

Page #2

C103B
 datasheet #2

Description

DATA SHEET C103Y C103YY C103A C103B SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL C103Y C103YY C103A C103B UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V RMS On-State Current (TC=60°C) IT(RMS) 0.8 A Pea

 
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