C103B SCR DATASHEET

C103B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 30 V
   Maximum RMS on-state current (I_T(RMS)): 0.8 A
   Non repetitive surge peak on-state current (I_TSM): 8 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 1.5 V
   Triggering gate current (I_GT): 200 mA
   Holding current (I_H): 5 mA

Package: TO‑92

 

C103B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

C103B Datasheet

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Description

DATA SHEET C103Y C103YY C103A C103B SILICON CONTROLLED RECTIFIER 0.8 AMP, 30 THRU 200 VOLTS TO-92 CASE DESCRIPTION The CENTRAL SEMICONDUCTOR C103 Series types are Epoxy Molded Silicon Controlled Rectifiers designed for control systems and sensing circuit applications. MAXIMUM RATINGS (TC=25°C unless otherwise noted) SYMBOL C103Y C103YY C103A C103B UNITS Peak Repetitive Off-State Voltage VDRM, VRRM 30 60 100 200 V RMS On-State Current (TC=60°C) IT(RMS) 0.8 A Pea