C106B SCR DATASHEET

C106B ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 4 A
   Non repetitive surge peak on-state current (I_TSM): 20 A
   Triggering gate voltage (V_GT): 0.8 V
   Peak on-state voltage drop (V_TM): 2.2 V
   Triggering gate current (I_GT): 200 mA

Package: TO‑202

 

C106B Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

C106B Datasheet

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Description

C106 Series 单向可控硅/THYRISTOR 特点： 提供可靠的消费级应用，如温控，照明，调速等 Features: The consumption level provide reliable applications, such as temperature, lighting, speed, etc 极限参数/Absolute maximum ratings(Ta=25℃) 参数符 测试条件 数值 单位 号 Test condition Rating Unit Symbol C106B 200 V DRM， R =1K GK C106D 400 V T =-40 to 110℃ C V C106M RRM 600 I T =80℃ 4 A A T(RMS) I T =80℃ 2.55