C122F1 SCR DATASHEET

C122F1 ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum peak gate power (P_GM): 5 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum average on-state current (I_T(AVR)): 5.1 A
   Maximum RMS on-state current (I_T(RMS)): 8 A
   Non repetitive surge peak on-state current (I_TSM): 82 A
   Critical repetitive rate of rise of on-state current (dI/dt): 100 A/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 40 K/W
   Junction to case thermal resistance (R_TH(j-c)): 2.1 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.83 V
   Triggering gate current (I_GT): 25 mA
   Holding current (I_H): 30 mA

Package: TO220AB

 

C122F1 Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

C122F1 Datasheet

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Description

C122F1G Silicon Controlled Rectifiers Reverse Blocking Thyristors Designed primarily for full-wave ac control applications, such as motor controls, heating controls and power supplies; or wherever half-wave silicon gate-controlled, solid-state devices are needed. http://onsemi.com Features SCRs • Glass Passivated Junctions and Center Gate Fire for Greater 8 AMPERES RMS Parameter Uniformity and Stability 50 VOLTS • Small, Rugged, Thermowatt Construction for Low Thermal Resist