CLA60MT1200NTZ SCR DATASHEET
CLA60MT1200NTZ ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1200 V
Maximum average on-state current (IT(AVR)): 80 A
Maximum RMS on-state current (IT(RMS)): 126 A
Non repetitive surge peak on-state current (ITSM): 970 A
Critical rate of rise of off-state voltage (dV/dt): 1000 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..150 °C
Junction to case thermal resistance (RTH(j-c)): 0.2 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.4 V
Triggering gate current (IGT): 38 mA
Package: PLUS247
CLA60MT1200NTZ Datasheet
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Description
CLA60MT1200NTZ VRRM = 1200 V High Efficiency Thyristor ITAV = 30 A VT = 1,25 V Three Quadrants operation: QI - QIII 1~ Triac Part number CLA60MT1200NTZ Backside: anode/cathode Three Quadrants Operation Positive Half Cycle + T2 T2 2 (-) IGT (+) IGT T1 T1 REF REF QII QI IGT - + IGT T2 QIII QIV 3 (-) IGT 1 T1 REF - Negative Half Cycle Note: All Polarities are referenced to T1 Features / Advantages: Applications: Package: TO-268AA (D3Pak-HV) ● Triac for line frequ
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |