CLB30I1200HB SCR DATASHEET

CLB30I1200HB ELECTRICAL SPECIFICATIONS

 

   Type: SCR
   Maximum repetitive peak and off-state voltage (V_DRM): 1200 V
   Maximum average on-state current (I_T(AVR)): 30 A
   Maximum RMS on-state current (I_T(RMS)): 47 A
   Non repetitive surge peak on-state current (I_TSM): 325 A
   Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): ..150 °C
   Junction to case thermal resistance (R_TH(j-c)): 0.5 K/W

Package: TO‑263AB

 

CLB30I1200HB Replacements

Type
	< PGM <		W
	< VDRM <		V
	< IT(AVR) <		A
	< IT(RMS) <		A
	< ITSM <		A
	< dI/dt <		A/µs
	< dV/dt <		V/µs
Tstg, Tj	>		°C
RTH(j-a)	<		K/W
RTH(j-c)	<		K/W
VGT	<		V
VTM	<		V
IGT	<		mA
IH	<		mA
Package			+ similar ones

 SEARCH - Replacements for SCR and Triac

 

CLB30I1200HB Datasheet

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Description

CLB30I1200HB VRRM = 1200V High Efficiency Thyristor I= 30 A TAV VT = 1.25 V Single Anode Gated Thyristor Part number CLB30I1200HB Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-247 ● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline ● Planar passivated chip ● Softstart AC motor control ● RoHS compliant ● Long-term stability ● DC Motor control ● Epoxy meets UL 94V-0 ● Power converter ● AC power c