CLB30I1200PZ SCR DATASHEET
CLB30I1200PZ ELECTRICAL SPECIFICATIONS
Type: SCR
Maximum repetitive peak and off-state voltage (VDRM): 1600 V
Maximum average on-state current (IT(AVR)): 20 A
Maximum RMS on-state current (IT(RMS)): 31 A
Non repetitive surge peak on-state current (ITSM): 195 A
Critical rate of rise of off-state voltage (dV/dt): 500 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): ..150 °C
Junction to case thermal resistance (RTH(j-c)): 0.7 K/W
Package: TO‑220AB
CLB30I1200PZ Datasheet
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Description
CLB30I1200PZ VRRM = 1200 V High Efficiency Thyristor ITAV = 30 A VT = 1,27 V Single Anode Gated Thyristor Part number CLB30I1200PZ Backside: cathode 1 2 3 Features / Advantages: Applications: Package: TO-263 (D2Pak-HV) ● Thyristor for line frequency ● Line rectifying 50/60 Hz ● Industry standard outline ● Planar passivated chip ● Softstart AC motor control ● RoHS compliant ● Long-term stability ● DC Motor control ● Epoxy meets UL 94V-0 ● Thyristor can be use
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |