CQ202-4NS-2 Triac Spec
CQ202-4NS-2 ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 40 W
Maximum repetitive peak and off-state voltage (VDRM): 200 V
Maximum RMS on-state current (IT(RMS)): 45 A
Non repetitive surge peak on-state current (ITSM): 300 A
Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 50 K/W
Junction to case thermal resistance (RTH(j-c)): 0.8 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.8 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 80 mA
Package: TO‑218
CQ202-4NS-2 Spec
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Description
CQ202-4BS-2 CQ202-4DS-2 CQ202-4MS-2 www.centralsemi.com CQ202-4NS-2 DESCRIPTION: 4.0 AMP TRIAC The CENTRAL SEMICONDUCTOR CQ202-4BS-2 200 THRU 800 VOLTS series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CQ202 CQ202 CQ202 CQ202 SYMBOL -4BS-2 -4DS-2 -4MS-2 -4NS-2 UNITS Peak Repetitive Off-St


