CQ202-4NS-2 Triac DATASHEET

CQ202-4NS-2 ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 40 W
   Maximum repetitive peak and off-state voltage (V_DRM): 200 V
   Maximum RMS on-state current (I_T(RMS)): 45 A
   Non repetitive surge peak on-state current (I_TSM): 300 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to ambient thermal resistance (R_TH(j-a)): 50 K/W
   Junction to case thermal resistance (R_TH(j-c)): 0.8 K/W
   Triggering gate voltage (V_GT): 1.5 V
   Peak on-state voltage drop (V_TM): 1.8 V
   Triggering gate current (I_GT): 50 mA
   Holding current (I_H): 80 mA

Package: TO‑218

CQ202-4NS-2 Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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CQ202-4NS-2 Datasheet

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Description

CQ202-4BS-2 CQ202-4DS-2 CQ202-4MS-2 www.centralsemi.com CQ202-4NS-2 DESCRIPTION: 4.0 AMP TRIAC The CENTRAL SEMICONDUCTOR CQ202-4BS-2 200 THRU 800 VOLTS series type is an epoxy molded silicon triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER TO-202-2 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) CQ202 CQ202 CQ202 CQ202 SYMBOL -4BS-2 -4DS-2 -4MS-2 -4NS-2 UNITS Peak Repetitive Off-St

LIST

Last Update

SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CQ202-4NS-2 Datasheet