All Transistors. SCR. CQ220-12D Datasheet

 

CQ220-12D Triac DATASHEET

CQ220-12D ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 40 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 12 A
   Non repetitive surge peak on-state current (ITSM): 125 A
   Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
   Critical rate of rise of off-state voltage (dV/dt): 100 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..110 °C
   Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
   Junction to case thermal resistance (RTH(j-c)): 2.7 K/W
   Triggering gate voltage (VGT): 1.5 V
   Peak on-state voltage drop (VTM): 1.5 V
   Triggering gate current (IGT): 25 mA
   Holding current (IH): 25 mA

Package: TO‑220

 

CQ220-12D Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CQ220-12D Datasheet

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CQ220-12D
 datasheet

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CQ220-12D
 datasheet #2

Description

TM CQ220-12B CQ220-12D Central CQ220-12M Semiconductor Corp. CQ220-12N 12 AMP TRIAC DESCRIPTION: 200 THRU 800 VOLTS The CENTRAL SEMICONDUCTOR CQ220-12B series type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING CODE: FULL PART NUMBER TO-220 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ220 CQ220 CQ220 CQ220 -12B -12D -12M -12N UNITS Peak Repetitive Off-State Volta

 
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