CQ220I-16M Triac DATASHEET
CQ220I-16M ELECTRICAL SPECIFICATIONS
Type: Triac
Maximum peak gate power (PGM): 40 W
Maximum repetitive peak and off-state voltage (VDRM): 800 V
Maximum RMS on-state current (IT(RMS)): 16 A
Non repetitive surge peak on-state current (ITSM): 170 A
Critical repetitive rate of rise of on-state current (dI/dt): 10 A/µs
Critical rate of rise of off-state voltage (dV/dt): 250 V/µs
Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
Junction to ambient thermal resistance (RTH(j-a)): 60 K/W
Junction to case thermal resistance (RTH(j-c)): 2.9 K/W
Triggering gate voltage (VGT): 1.5 V
Peak on-state voltage drop (VTM): 1.6 V
Triggering gate current (IGT): 50 mA
Holding current (IH): 50 mA
Package: TO‑220F
CQ220I-16M Datasheet
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Description
TM Central Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 • Fax: (631) 435-1824 www.centralsemi.com
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LIST
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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |