CQ223-4N Triac Spec

CQ223-4N ELECTRICAL SPECIFICATIONS

 

   Type: Triac
   Maximum peak gate power (PGM): 0.1 W
   Maximum repetitive peak and off-state voltage (VDRM): 600 V
   Maximum RMS on-state current (IT(RMS)): 1 A
   Non repetitive surge peak on-state current (ITSM): 10 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (Tstg, Tj): -40..125 °C
   Junction to case thermal resistance (RTH(j-c)): 10 K/W
   Triggering gate voltage (VGT): 2 V
   Peak on-state voltage drop (VTM): 2 V
   Triggering gate current (IGT): 10 mA
   Holding current (IH): 10 mA

Package: SOT‑223

 

CQ223-4N Replacements

< PGM < W
< VDRM < V
< IT(AVR) < A
< IT(RMS) < A
< ITSM < A
< dI/dt < A/µs
< dV/dt < V/µs
Tstg, Tj > °C
RTH(j-a) < K/W
RTH(j-c) < K/W
VGT < V
VTM < V
IGT < mA
IH < mA
Package + similar ones

  - Replacements for SCR and Triac

 

CQ223-4N Spec

Page #1

CQ223-4N datasheet

Page #2

CQ223-4N datasheet #2

Description

CQ223-4M CQ223-4N www.centralsemi.com SURFACE MOUNT DESCRIPTION: 4 AMP SILICON TRIAC The CENTRAL SEMICONDUCTOR CQ223-4M series 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ223-4M CQ223-4N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=