CQ223-4N Triac DATASHEET

CQ223-4N ELECTRICAL SPECIFICATIONS

   Type: Triac
   Maximum peak gate power (P_GM): 0.1 W
   Maximum repetitive peak and off-state voltage (V_DRM): 600 V
   Maximum RMS on-state current (I_T(RMS)): 1 A
   Non repetitive surge peak on-state current (I_TSM): 10 A
   Critical rate of rise of off-state voltage (dV/dt): 5 V/µs
   Maximum operating junction and storage temperature range (T_stg, T_j): -40..125 °C
   Junction to case thermal resistance (R_TH(j-c)): 10 K/W
   Triggering gate voltage (V_GT): 2 V
   Peak on-state voltage drop (V_TM): 2 V
   Triggering gate current (I_GT): 10 mA
   Holding current (I_H): 10 mA

Package: SOT‑223

CQ223-4N Replacements

Type
	< P_GM <	W
	< V_DRM <	V
	< I_T(AVR) <	A
	< I_T(RMS) <	A
	< I_TSM <	A
	< dI/dt <	A/µs
	< dV/dt <	V/µs
T_stg, T_j	>	°C
R_TH(j-a)	<	K/W
R_TH(j-c)	<	K/W
V_GT	<	V
V_TM	<	V
I_GT	<	mA
I_H	<	mA
Package		+ similar ones

- Replacements for SCR and Triac

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CQ223-4N Datasheet

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Description

CQ223-4M CQ223-4N www.centralsemi.com SURFACE MOUNT DESCRIPTION: 4 AMP SILICON TRIAC The CENTRAL SEMICONDUCTOR CQ223-4M series 600 THRU 800 VOLTS type is an Epoxy Molded Silicon Triac designed for full wave AC control applications featuring gate triggering in all four (4) quadrants. MARKING: FULL PART NUMBER SOT-223 CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CQ223-4M CQ223-4N UNITS Peak Repetitive Off-State Voltage VDRM 600 800 V RMS On-State Current (TC=

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SCR: ТС243-800 | ТС243-630 | ТС243-500 | ТС243-1000 | ТС171-320 | ТС171-250 | ТС165-80-9 | ТС165-80-8 | ТС165-80-6 | ТС165-80-5 | ТС165-80-4 | ТС165-80-2 | ТС165-80-12 | ТС165-80-11 | ТС165-80-10 | ТС165-63-9 | ТС165-63-8 | ТС165-63-6 | ТС165-63-5 | ТС165-63-4 |

All Transistors. SCR. CQ223-4N Datasheet